Carlo De Santi

Orcid: 0000-0001-6064-077X

According to our database¹, Carlo De Santi authored at least 45 papers between 2011 and 2024.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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In proceedings

Article

PhD thesis

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Other

Bibliography

2024

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.

[BibT_eX]

[DOI]

Zhan Gao

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Modeling Hot-Electron Trapping in GaN-based HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

[BibT_eX]

[DOI]

Zhan Gao

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

[BibT_eX]

[DOI]

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Full Optical Contactless Thermometry Based on LED Photoluminescence.

[BibT_eX]

[DOI]

IEEE Trans. Instrum. Meas., 2021

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

[BibT_eX]

[DOI]

Francesca Chiocchetta

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Current crowding as a major cause for InGaN LED degradation at extreme high current density.

[BibT_eX]

[DOI]

Proceedings of the IECON 2021, 2021

Charge Trapping in GaN Power Transistors: Challenges and Perspectives.

[BibT_eX]

[DOI]

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Current induced degradation study on state of the art DUV LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Positive and negative threshold voltage instabilities in GaN-based transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Degradation of vertical GaN FETs under gate and drain stress.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Long-term degradation of InGaN-based laser diodes: Role of defects.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

2016

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Degradation of InGaN-based LEDs related to charge diffusion and build-up.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

2015

Failure causes and mechanisms of retrofit LED lamps.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Long-term degradation mechanisms of mid-power LEDs for lighting applications.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

Analysis of the mechanisms limiting the reliability of retrofit LED lamps.

[BibT_eX]

[DOI]

Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

2014

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

2013

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2013

2011

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

Carlo De Santi

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