Carine Jahan

According to our database, Carine Jahan authored at least 6 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A synergistic fault tolerance framework for Mbit 28nm embedded RRAM.

Papavramidou Panagiota, Sebastien Ricavy, Christopher Mounet, Carine Jahan, Niccolo Castellani, François Andrieu

Proceedings of the 30th IEEE International Symposium on On-Line Testing and Robust System Design, 2024

2023

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).

Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2017

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory.

Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra

Microelectron. Reliab., 2017

2012

High temperature reliability of μtrench Phase-Change Memory devices.

Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo

Microelectron. Reliab., 2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012