C. X. Li

According to our database, C. X. Li authored at least 2 papers between 2007 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2008

Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric.

C. X. Li, X. Zou, Pui-To Lai, Jing-Ping Xu, C. L. Chan

Microelectron. Reliab., 2008

2007

A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.

X. Zou, Jing-Ping Xu, C. X. Li, Pui-To Lai, W. B. Chen

Microelectron. Reliab., 2007