C. Sung

According to our database, C. Sung authored at least 3 papers in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors.

S. W. Yoo, Y. Lee, W. J. Jung, H. Kim, S. Byeon, M. Kim, J. Lee, T. Lee, M. J. Hong, Y. G. Song, S. Lee, M. Terai, K. J. Yoo, C. Sung, W. Lee, M. H. Cho, D. Kim, D. Ha, S. Ahn, J. H. Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory.

Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node.

Daewon Ha, Y. Lee, S. Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, K. Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, Sujin Ahn, J. H. Song

Proceedings of the IEEE International Memory Workshop, 2024