C. Moreau

According to our database, C. Moreau authored at least 5 papers between 2006 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.

Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux

Microelectron. Reliab., 2017

2015

Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies.

O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux

Microelectron. Reliab., 2015

2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013

2010

Reliability of high voltage/high power L/S-band Hbt technology.

Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau

Microelectron. Reliab., 2010

2006

A complete RF power technology assessment for military applications.

C. Moreau, P. Le Helleye, D. Ruelloux

Microelectron. Reliab., 2006