C. Lavoie

According to our database, C. Lavoie authored at least 2 papers in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices.

M. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications.

H. Y. Cheng, Z. L. Liu, A. Majumdar, Alexander Grun, A. Ray, J. Su, Malte J. Rasch, Fabio Carta, Lynne M. Gignac, C. Lavoie, C. W. Cheng, M. Bright Sky, H. L. Lung

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024