C. Aquistapace

According to our database, C. Aquistapace authored at least 2 papers between 2019 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects.

Thiago Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls

J. Electron. Test., 2020

2019

A Comparative Study Between FinFET and CMOS-Based SRAMs under Resistive Defects.

Thiago Santos Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls

Proceedings of the IEEE Latin American Test Symposium, 2019