Byung-Sick Moon

According to our database, Byung-Sick Moon authored at least 3 papers between 2010 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme.

Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011

An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs.

Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Satoru Yamada, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim

IEICE Trans. Electron., 2011

2010

A highly reliable multi-cell antifuse scheme using DRAM cell capacitors.

Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim

Proceedings of the 36th European Solid-State Circuits Conference, 2010