Byoung Min

According to our database, Byoung Min authored at least 10 papers between 2006 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.

P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Robust Off-State TDDB Reliability of n-LDMOS.

Wen Liu, Dimitris P. Ioannou, Johnatan Kantarovsky, Byoung Min, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability.

M. Hauser, P. Srinivasan, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area.

Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2021

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.

P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Reliability Failure Modes of an Integrated Ge Photodiode for Si Photonics.

Stewart E. Rauch, Dongho Lee, Alexey Vert, Lin Jiang, Byoung Min

Proceedings of the Optical Fiber Communications Conference and Exhibition, 2020

A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.

P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications.

Peter C. Paliwoda, Mohamed A. Rabie, Oscar D. Restrepo, Eduardo Cruz Silva, E. Kaltalioglu, Fernando Guarin, Kenneth Barnett, Jeffrey B. Johnson, William Taylor, Myra Boenke, Byoung Min

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs.

M. Iqbal Mahmud, Amit Gupta, Maria Toledano-Luque, N. Rao Mavilla, Jeffrey B. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, Salvatore Cimino, Byoung Min, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2006

Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors.

Héctor Sánchez, Bill Johnstone, Doug Roberts, Om Mandhana, Brad Melnick, Muhsin Celik, Mike Baker, Jim Hayden, Byoung Min, John Edgerton, Bruce White

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006