Byeonghun Yun

Orcid: 0000-0001-7847-1329

According to our database1, Byeonghun Yun authored at least 13 papers between 2019 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2024
High-Power 150/245-GHz Fundamental Oscillators With 12.1/-2.54-dBm Peak Output Power for Phased Array Transceivers.
IEEE J. Solid State Circuits, November, 2024

2023
H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G<sub>max</sub>-Core and Transmission Line-Based Zero-Degree Power Combining Networks.
IEEE J. Solid State Circuits, November, 2023

A 250-GHz Wideband Direct-Conversion CMOS Receiver Adopting Baseband Equalized Low-Loss Resistive Passive Mixer.
IEEE Trans. Circuits Syst. II Express Briefs, October, 2023

A -124-dBm Sensitivity Interference-Resilient Direct-Conversion Duty-Cycled Wake-Up Receiver Achieving 0.114 mW at 1.966-s Wake-Up Latency.
IEEE J. Solid State Circuits, 2023

Analysis and Design of Power-Efficient H-Band CMOS Frequency Doubler Employing Gain Boosting and Harmonic Enhancing Techniques.
IEEE Access, 2023

2022
An LPWAN Radio with a Reconfigurable Data/Duty-Cycled-Wake-Up Receiver.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2021
Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G<sub>max</sub> Gain Boosting Technique.
IEEE J. Solid State Circuits, 2021

A -123-dBm Sensitivity Split-Channel BFSK Reconfigurable Data/Wake-Up Receiver for Low-Power Wide-Area Networks.
IEEE J. Solid State Circuits, 2021

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core.
IEEE Access, 2021

245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021

2020
A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/-3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

29.7 A 490GHz 32mW Fully Integrated CMOS Receiver Adopting Dual-Locking FLL.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2019
A 915 MHz, 499 μW, -99 dBm, and 100 kbps BFSK Direct Conversion Receiver.
Proceedings of the 45th IEEE European Solid State Circuits Conference, 2019


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