Bumsu Park
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Bibliography
2024
Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Proceedings of the IEEE International Conference on Acoustics, 2024