Bruno Sagnes

According to our database, Bruno Sagnes authored at least 4 papers between 2013 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, J. Elbeyrouthy, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 29th International Conference on Microelectronics, 2017

2014

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Microelectron. Reliab., 2014

Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Why are SCE overestimated in FD-SOI MOSFETs?

Carlos Navarro, Maryline Bawedin, François Andrieu, Bruno Sagnes, Sorin Cristoloveanu

Proceedings of the European Solid-State Device Research Conference, 2013