Brian Pedersen

According to our database, Brian Pedersen authored at least 3 papers between 2010 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS.

Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang

IEEE J. Solid State Circuits, 2016

2015

Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process.

Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang

Proceedings of the Symposium on VLSI Circuits, 2015

2010

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μ m ² <i>1T1R</i> Bit Cell in 32 nm High-k Metal-Gate CMOS.

Sarvesh H. Kulkarni, Zhanping Chen, Jun He, Lei Jiang, Brian Pedersen, Kevin Zhang

IEEE J. Solid State Circuits, 2010