Boualem Djezzar

According to our database, Boualem Djezzar authored at least 9 papers between 2002 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2020

Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation.

Amel Chenouf, Boualem Djezzar, Hamid Bentarzi, Abdelmadjid Benabdelmoumene

IET Circuits Devices Syst., 2020

2014

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique.

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Microelectron. Reliab., 2014

An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction.

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Bécharia Nadji

J. Electron. Test., 2014

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction.

Hakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses.

Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Reaction-diffusion model for interface traps induced by BTS stress including H⁺, H and H2 as diffusion species.

Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida

Proceedings of the 9th International Design and Test Symposium, 2014

Does NBTI effect in MOS transistors depend on channel length?

Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane

Proceedings of the 26th International Conference on Microelectronics, 2014

2013

A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues.

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene

Microelectron. Reliab., 2013

2002

On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's.

Boualem Djezzar

Microelectron. Reliab., 2002