Bor-Ren Fang

According to our database, Bor-Ren Fang authored at least 1 paper in 2010.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2010

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs.

Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu

Microelectron. Reliab., 2010