Bongjae Kwon

According to our database, Bongjae Kwon authored at least 4 papers between 2016 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications.

Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization.

Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Giyong Yang, Hoonki Kim, Sanghoon Baek, Jonghoon Jung, Bongjae Kwon, Sungwee Cho, Hyuntaek Jung, Yongjae Choo, Jaeseung Choi

IEEE J. Solid State Circuits, 2017

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.

Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016

17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.

Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016