Blacksmith Wu

According to our database, Blacksmith Wu authored at least 6 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification.

Da Wang, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Dielectric Relaxation Performance of DRAM Storage Capacitors and Ways of Improvement.

Z. Asher Bai, Yixian Wang, Lixue Liu, Xi Zhang, Feng Yuan, Junsheng Meng, Zhongming Liu, Js Jeon, James Cho, Blacksmith Wu, Huihui Li, Guilei Wang, Chao Zhao, Kanyu Cao

Proceedings of the IEEE International Memory Workshop, 2023

2021

Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM.

Xiong Li, Huangxia Zhu, Xiaolin Guo, Kejun Mu, Peng Feng, Qi-An Xu, Blacksmith Wu, Kanyu Cao

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019

Improved Model for ESD Failure Caused by Stressing No Connect Pin.

Jingrui Ma, Qi-An Xu, Blacksmith Wu, Kanyu Cao

Proceedings of the 13th IEEE International Conference on ASIC, 2019

Improve DRAM Leakage Issue During RAS Operational Phase Through TCAD Simulation.

Ning Li, Wen-Yang Jiang, Blacksmith Wu, Kanyu Cao

Proceedings of the 13th IEEE International Conference on ASIC, 2019