Björn Pätzold

According to our database, Björn Pätzold authored at least 2 papers between 2019 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.

Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019