Binola K. Jebalin

According to our database, Binola K. Jebalin authored at least 7 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone.

Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal

Microelectron. J., 2024

Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs.

S. Angen Franklin, Binola K. Jebalin, Subhash Chander, D. Nirmal

Proceedings of the 7th International Conference on Devices, Circuits and Systems, 2024

2023

A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications.

J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A, D. Nirmal

Microelectron. J., October, 2023

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications.

Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal

Microelectron. J., 2023

2022

Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review.

J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith

Microelectron. J., 2022

2015

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal

Microelectron. J., 2015

2013

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics.

D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar

Microelectron. Reliab., 2013