Binjie Cheng

According to our database, Binjie Cheng authored at least 24 papers between 2004 and 2016.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2016

Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters.

André Lange, Christoph Sohrmann, Roland Jancke, Joachim Haase, Binjie Cheng, Asen Asenov, Ulf Schlichtmann

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2016

Nanowire transistor solutions for 5nm and beyond.

A. Asenov, Yangang Wang, Binjie Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev

Proceedings of the 17th International Symposium on Quality Electronic Design, 2016

2015

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow.

Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.

Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs.

Liping Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2013

Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study.

Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov

Microelectron. J., 2013

Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology.

Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov

IEEE Des. Test, 2013

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.

Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov

Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov

Proceedings of the European Solid-State Device Research Conference, 2013

2012

A framework to study time-dependent variability in circuits at sub-35nm technology nodes.

Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov

Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

Analysis of FinFET technology on memories.

Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber

Proceedings of the 18th IEEE International On-Line Testing Symposium, 2012

Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design.

Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability.

Feng Hong, Binjie Cheng, Scott Roy, David R. S. Cumming

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2011), 2011

New reliability mechanisms in memory design for sub-22nm technologies.

Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber

Proceedings of the 17th IEEE International On-Line Testing Symposium (IOLTS 2011), 2011

Statistical aspects of NBTI/PBTI and impact on SRAM yield.

Asen Asenov, Andrew R. Brown, Binjie Cheng

Proceedings of the Design, Automation and Test in Europe, 2011

2010

Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP.

Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov

IEEE Des. Test Comput., 2010

Variability resilient low-power 7T-SRAM design for nano-scaled technologies.

Touqeer Azam, Binjie Cheng, David R. S. Cumming

Proceedings of the 11th International Symposium on Quality of Electronic Design (ISQED 2010), 2010

Statistical NBTI-effect prediction for ULSI circuits.

Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010

Capturing intrinsic parameter fluctuations using the PSP compact model.

Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov

Proceedings of the Design, Automation and Test in Europe, 2010

Modeling and simulation of transistor and circuit variability and reliability.

Asen Asenov, Binjie Cheng, Daryoosh Dideban, Urban Kovac, Negin Moezi, Campbell Millar, Gareth Roy, Andrew R. Brown, Scott Roy

Proceedings of the IEEE Custom Integrated Circuits Conference, 2010

2009

Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability.

Noor Ain Kamsani, Binjie Cheng, Scott Roy, Asen Asenov

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2009), 2009

2007

The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations.

Binjie Cheng, Scott Roy, A. Asenov

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005

Probabilistic computing with future deep sub-micrometer devices: a modelling approach.

Nor Hisham Hamid, Alan F. Murray, David I. Laurenson, Scott Roy, Binjie Cheng

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

2004

The impact of random doping effects on CMOS SRAM cell.

Binjie Cheng, Scott Roy, Asen Asenov

Proceedings of the 33rd European Solid-State Circuits Conference, 2004