Binit Syamal

According to our database, Binit Syamal authored at least 6 papers between 2009 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Monolithic Co-integration of III-V Materials into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits.

Xing Zhou, Siau Ben Chiah, Binit Syamal, Kenneth Eng-Kian Lee

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2014

Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well.

Arjun Ajaykumar, Xing Zhou, Binit Syamal, Siau Ben Chiah

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Top-down drift-diffusion versus bottom-up quasi-ballistic formalism in device compact modeling.

Xing Zhou, Junbin Zhang, Binit Syamal, Zhaomin Zhu, Hongtao Zhou, Siau Ben Chiah

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2012

Modeling of noise for p-channel DG-FinFETs.

Srabanti Pandit, Binit Syamal, Chandan Kumar Sarkar

Microelectron. Reliab., 2012

Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions.

Kalyan Koley, Binit Syamal, Atanu Kundu, N. Mohankumar, Chandan Kumar Sarkar

Microelectron. Reliab., 2012

2009

Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications.

N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar

Microelectron. Reliab., 2009