Bingxu Ning

According to our database, Bingxu Ning authored at least 12 papers between 2011 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs.

Chang Cai, Bingxu Ning, Xue Fan, Tianqi Liu, Lingyun Ke, Gengsheng Chen, Jian Yu, Ze He, Liewei Xu, Jie Liu

Sci. China Inf. Sci., 2022

2021

Characterization and Classification of Heavy Ion Induced Failures in FPGA-based Logical Circuits.

Shuai Gao, Chang Cai, Bingxu Ning, Ze He, Jie Liu

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs.

Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, Mingjie Shen

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2016

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.

Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai

Microelectron. Reliab., 2016

2014

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.

Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi

Microelectron. Reliab., 2014

2013

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou

Microelectron. Reliab., 2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.

Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou

Microelectron. J., 2013

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.

Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2012

2011

Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou

Microelectron. Reliab., 2011

Total ionizing dose effects in elementary devices for 180-nm flash technologies.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2011

The impact of total ionizing radiation on body effect.

Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011

Impact of within-wafer process variability on radiation response.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011