Bing-Liang Yang

According to our database, Bing-Liang Yang authored at least 5 papers between 2002 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2011

Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation.

Wing-Shan Tam, Sik-Lam Siu, Bing-Liang Yang, Chi-Wah Kok, Hei Wong

Microelectron. Reliab., 2011

2008

Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation.

Banani Sen, Bing-Liang Yang, Hei Wong, Chi-Wah Kok, P. K. Chu, A. Huang

Microelectron. Reliab., 2008

2006

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection.

Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai

Microelectron. Reliab., 2006

2004

Conduction mechanisms in MOS gate dielectric films.

Bing-Liang Yang, P. T. Lai, Hei Wong

Microelectron. Reliab., 2004

2002

Ultra-shallow n⁺p junction formed by PH₃ and AsH₃ plasma immersion ion implantation.

Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong, P. T. Lai, Y. C. Cheng

Microelectron. Reliab., 2002