Bin Qiang

According to our database, Bin Qiang authored at least 3 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.

Li Liu, Dele Tai, Bin Qiang, Lijun Guan, Chunyu Peng, Chenghu Dai, Licai Hao, Wenjuan Lu, Zhiting Lin, Qiang Zhao, Xiulong Wu

IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

2023

Design of radiation-hardened memory cell by polar design for space applications.

Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Radiation-hardened 14T SRAM cell by polar design for space applications.

Licai Hao, Bin Qiang, Chenghu Dai, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Li Liu, Qiang Zhao, Xiulong Wu, Fei Sun

IEICE Electron. Express, 2023