Benoit Sklénard

According to our database, Benoit Sklénard authored at least 6 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications.

Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration.

Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate.

Gabriele Navarro, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

2017

Advances in the understanding of microscopic switching mechanisms in ReRAM devices (Invited paper).

Benoit Sklénard, Philippe Blaise, Boubacar Traore, Alberto Dragoni, Cecile Nail, Elisa Vianello

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.

M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez, F. Mazen, E. Vilain, M. Guillermet, Simon Jeannot, Elisa Vianello, Luca Perniola

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2013

The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire.

Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer

Proceedings of the European Solid-State Device Research Conference, 2013