Benoit Lambert
According to our database1,
Benoit Lambert
authored at least 19 papers
between 2001 and 2022.
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Bibliography
2022
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2017
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.
Microelectron. Reliab., 2017
2015
Microelectron. Reliab., 2015
Microelectron. Reliab., 2015
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies.
Microelectron. Reliab., 2015
2014
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
2013
Microelectron. Reliab., 2013
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab., 2013
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab., 2013
2012
Microelectron. Reliab., 2012
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab., 2012
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2010
Microelectron. Reliab., 2010
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.
Microelectron. Reliab., 2010
2008
Microelectron. Reliab., 2008
2002
Microelectron. Reliab., 2002
2001
Microelectron. Reliab., 2001