Benoit Bakeroot

Orcid: 0000-0003-4392-1777

According to our database1, Benoit Bakeroot authored at least 15 papers between 2007 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015
A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators.
IEEE Trans. Circuits Syst. I Regul. Pap., 2015

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.
Microelectron. Reliab., 2014

2008
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers.
Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, 2008

2007
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling.
Proceedings of the 20th International Conference on VLSI Design (VLSI Design 2007), 2007


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