Benoit Bakeroot

According to our database, Benoit Bakeroot authored at least 15 papers between 2007 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.

Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.

Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.

Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.

Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators.

Ramses Pierco, Guy Torfs, Jochen Verbrugghe, Benoit Bakeroot, Johan Bauwelinck

IEEE Trans. Circuits Syst. I Regul. Pap., 2015

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.

Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

2008

A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers.

Jordie Buyle, Vincent De Gezelle, Benoit Bakeroot, Jan Doutreloigne

Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, 2008

2007

A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling.

Yogesh Singh Chauhan, François Krummenacher, Renaud Gillon, Benoit Bakeroot, Michel J. Declercq, Adrian M. Ionescu

Proceedings of the 20th International Conference on VLSI Design (VLSI Design 2007), 2007