Benjamín Iñíguez

According to our database1, Benjamín Iñíguez authored at least 39 papers between 1994 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors.
Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and System, 2022

Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States.
Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and System, 2022

2021
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates.
Proceedings of the 2021 28th International Conference on Mixed Design of Integrated Circuits and System, 2021

2019
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors.
Proceedings of the 26th International Conference on Mixed Design of Integrated Circuits and Systems, 2019

Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models.
Proceedings of the 26th International Conference on Mixed Design of Integrated Circuits and Systems, 2019

Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models.
Proceedings of the 25th International Conference "Mixed Design of Integrated Circuits and System", 2018

2017
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs.
Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs.
Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

2016
On the series resistance in staggered amorphous thin film transistors.
Microelectron. Reliab., 2016

Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs.
Proceedings of the 2016 MIXDES, 2016

Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs.
Proceedings of the 2016 MIXDES, 2016

Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters.
Microelectron. J., 2015

DC self-heating effects modelling in SOI and bulk FinFETs.
Microelectron. J., 2015

Graphene electronic sensors - review of recent developments and future challenges.
IET Circuits Devices Syst., 2015

2014
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating.
Microelectron. Reliab., 2014

Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects.
Microelectron. J., 2014

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current.
Microelectron. J., 2014

Improved analytical potential modeling in double-gate tunnel-FETs.
Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems, 2014

3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.
Microelectron. J., 2013

A compact charge-based physical model for AlGaN/GaN HEMTs.
Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

Unified charge model for short-channel junctionless double gate MOSFETs.
Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs.
Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2012
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors.
Microelectron. Reliab., 2012

Modeling the behavior of amorphous oxide thin film transistors before and after bias stress.
Microelectron. Reliab., 2012

Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology.
IET Circuits Devices Syst., 2012

Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime.
IET Circuits Devices Syst., 2012

2011
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation.
Microelectron. Reliab., 2011

Modeling the subthreshold region of OTFTs.
Proceedings of the 8th International Conference on Electrical Engineering, 2011

2008
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.
Microelectron. Reliab., 2008

2007
Charge-Based Compact Modeling of Multiple-Gate MOSFET.
Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007

2006
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs.
Proceedings of the Computational Science, 2006

2005
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
Microelectron. Reliab., 2005

1998
Clocked Dosimeter Compatible with Digital CMOS Technology.
J. Electron. Test., 1998

1995
Development of a C<sub>infinity</sub>-continuous small-signal model for a MOS transistor in normal operation.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1995

1994
Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor.
Proceedings of the 1994 IEEE International Symposium on Circuits and Systems, ISCAS 1994, London, England, UK, May 30, 1994


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