Barry J. O'Sullivan

According to our database, Barry J. O'Sullivan authored at least 20 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.

Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors.

Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.

Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.

Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon.

Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.

J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.

Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution.

Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2021

STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.

Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2021

2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.

Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs.

Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.

Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors.

Alicja Lesniewska, S. A. Srinivasan, Joris Van Campenhout, Barry J. O'Sullivan, Kris Croes

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Comphy - A compact-physics framework for unified modeling of BTI.

Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser

Microelectron. Reliab., 2018

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.

Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit.

Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2005

Electrical characterization of HfO₂ films obtained by UV assisted injection MOCVD.

J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley

Microelectron. Reliab., 2005

2001

Flat band voltage shift and oxide properties after rapid thermal annealing.

Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven

Microelectron. Reliab., 2001