B. Jayant Baliga

Orcid: 0000-0001-9171-0080

According to our database1, B. Jayant Baliga authored at least 13 papers between 1988 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Awards

IEEE Fellow

IEEE Fellow 1983, "For contributions to the development of power semiconductor devices.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
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Links

On csauthors.net:

Bibliography

2023
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application.
IEEE Access, 2023

2021
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement.
IEEE Access, 2021

2020
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies.
Proceedings of the 2020 Device Research Conference, 2020

2019
Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation.
Proceedings of the IECON 2019, 2019

Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.
Proceedings of the Device Research Conference, 2019

2018
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization.
Proceedings of the 76th Device Research Conference, 2018

2017
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET).
IEEE Trans. Ind. Electron., 2017

2016
SiC power devices: From conception to social impact.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2001
The future of power semiconductor device technology.
Proc. IEEE, 2001

1994
Power semiconductor devices for variable-frequency drives.
Proc. IEEE, 1994

1988
Evolution of MOS-bipolar power semiconductor technology.
Proc. IEEE, 1988


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