B. El Jani

According to our database, B. El Jani authored at least 8 papers between 2003 and 2008.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2008

AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response.

M. M. Habchi, Ahmed Rebey, B. El Jani

Microelectron. J., 2008

2006

Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response.

C. Touzi, F. Omnès, Tarek Boufaden, P. Gibart, B. El Jani

Microelectron. J., 2006

In depth study of the compensation in annealed heavily carbon doped GaAs.

Ahmed Rebey, W. Fathallah, B. El Jani

Microelectron. J., 2006

2004

Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry.

Ahmed Rebey, M. M. Habchi, Zohra Benzarti, B. El Jani

Microelectron. J., 2004

Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs.

Ahmed Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laugt

Microelectron. J., 2004

Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE.

N. Chaaben, Tarek Boufaden, M. Christophersen, B. El Jani

Microelectron. J., 2004

2003

GaN growth on porous silicon by MOVPE.

Tarek Boufaden, N. Chaaben, M. Christophersen, B. El Jani

Microelectron. J., 2003

New photoluminescence lines in Vanadium doped GaAs grown by MOVPE.

A. Bchetnia, Ahmed Rebey, B. El Jani, J. Cernogora, J.-L. Fave

Microelectron. J., 2003