Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs.

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications.

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs.

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model.

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States.

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor.

Universal Hot Carrier Degradation Model under DC and AC Stresses.

GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films.

Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress.

In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation.

Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization System.

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs.