Statistical Observations of Three Co-Existing NBTI Behaviors in 28 nm HKMG by On-Chip Monitor With Less Recovery Impact.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory.
IEEE Trans. Circuits Syst. II Express Briefs, 2017
3D domain wall memory-cell structure, array architecture and operation algorithm with anti-disturbance.
Microelectron. J., 2017
A small area and low power true random number generator using write speed variation of oxidebased RRAM for IoT security application.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2017
ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.
Proceedings of the 12th IEEE International Conference on ASIC, 2017