2024

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput.

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2017

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology.

[DOI]

Ryuji Yamashita

,

Sagar Magia

,

Tsutomu Higuchi

,

Kazuhide Yoneya

,

Toshio Yamamura

,

Hiroyuki Mizukoshi

,

Shingo Zaitsu

,

Minoru Yamashita

,

Shunichi Toyama

,

Norihiro Kamae

,

Juan Lee

,

Shuo Chen

,

Jiawei Tao

,

William Mak

,

Xiaohua Zhang

,

Ying Yu

,

Yuko Utsunomiya

,

Yosuke Kato

,

Manabu Sakai

,

Masahide Matsumoto

,

Hardwell Chibvongodze

,

Naoki Ookuma

,

Hiroki Yabe

,

Subodh Taigor

,

Rangarao Samineni

,

Takuyo Kodama

,

Yoshihiko Kamata

,

Yuzuru Namai

,

Jonathan Huynh

,

Sung-En Wang

,

Yankang He

,

Trung Pham

,

Vivek Saraf

,

Akshay Petkar

,

Mitsuyuki Watanabe

,

Koichiro Hayashi

,

Prashant Swarnkar

,

Hitoshi Miwa

,

Aditya Pradhan

,

Sulagna Dey

,

Debasish Dwibedy

,

Thushara Xavier

,

Muralikrishna Balaga

,

Samiksha Agarwal

,

Swaroop Kulkarni

,

Zameer Papasaheb

,

Sahil Deora

,

Patrick Hong

,

Meiling Wei

,

Gopinath Balakrishnan

,

Takuya Ariki

,

Kapil Verma

,

Chang Hua Siau

,

Yingda Dong

,

Ching-Huang Lu

,

Toru Miwa

,

Farookh Moogat

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017