30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology.

[DOI]

Tsutomu Higuchi

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Takuyo Kodama

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Proceedings of the IEEE International Solid-State Circuits Conference, 2021

A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology.

[DOI]

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology.

[DOI]

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Hardwell Chibvongodze

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Gopinath Balakrishnan

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Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

A 151mm<sup>2</sup> 64Gb MLC NAND flash memory in 24nm CMOS technology.

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2011

A 120mm<sup>2</sup> 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology.

[DOI]

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008