A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.
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Proceedings of the IEEE International Solid- State Circuits Conference, 2019
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
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Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.
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Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014