A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement.
Proceedings of the IEEE International Memory Workshop, 2022
Bias-Dependent Variation in FinFET SRAM.
IEEE Trans. Very Large Scale Integr. Syst., 2020
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM.
IEEE Trans. Very Large Scale Integr. Syst., 2019
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the International Conference on IC Design and Technology, 2016