128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.
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Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology.
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IEEE J. Solid State Circuits, 2009
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.
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Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
A 120mm<sup>2</sup> 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology.
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Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm.
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Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008