2009
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate.
IEEE J. Solid State Circuits, 2009

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology.
IEEE J. Solid State Circuits, 2009

2008
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008