32 dBm IP1dB/46 dBm IIP3 GaN Phase-Amplitude Setting Circuit at Ku-Band.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
Partitioned Ohtomo Stability Test for Efficient Analysis of Large-Signal Solutions.
IEEE Access, 2024
A C-Band MMIC Multi-Functional Core Chip with 7 Bits Phase Shifter and Attenuator Using GaAs pHEMT.
Proceedings of the 19th Conference on Ph.D Research in Microelectronics and Electronics, 2024
A Ku-Band MMIC Two-Stage GaAs-based Low Noise Amplifier for Radar Applications.
Proceedings of the 19th Conference on Ph.D Research in Microelectronics and Electronics, 2024
A Simple Synthesis Methodology for 3-Stage LNA Design in GaAs Technology.
Proceedings of the 19th Conference on Ph.D Research in Microelectronics and Electronics, 2024
A Bound on the Scattering Parameters of Unconditionally Stable N-Ports.
IEEE Trans. Circuits Syst. II Express Briefs, March, 2023
Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications.
IEEE Access, 2023
New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
Broadband Amplifier Design Technique by Dissipative Matching Networks.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021
A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology.
Proceedings of the 15th Conference on Ph.D. Research in Microelectronics and Electronics, 2019
Noise measure-based design methodology for simultaneously matched multi-stage low-noise amplifiers.
IET Circuits Devices Syst., 2012
MMIC LNAs for Radioastronomy Applications Using Advanced Industrial 70 nm Metamorphic Technology.
IEEE J. Solid State Circuits, 2010