Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Rapid Growth of SiO2 on SiC with Low Ditusing High Pressure Microwave Oxygen Plasma.
Proceedings of the 13th IEEE International Conference on ASIC, 2019