2024
A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology.
IEEE J. Solid State Circuits, April, 2024

2022
4nm Voltage Auto-Tracking SRAM Pulse Generator with Fully RC Optimized Row Auto-Tracking Write Assist Circuits.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2021