Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.
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Proceedings of the IEEE International Reliability Physics Symposium, 2023
Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Learning Topological Interactions for Multi-Class Medical Image Segmentation.
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Proceedings of the Computer Vision - ECCV 2022, 2022