Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics.
CoRR, 2024
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing.
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CoRR, 2019
Material selection and device design guidelines for two-dimensional materials based TFETs.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective.
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices.
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Proceedings of the IEEE International Reliability Physics Symposium, 2015
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
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Proceedings of the IEEE International Conference on IC Design & Technology, 2012
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.
Microelectron. Reliab., 2007
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.
Microelectron. Reliab., 2005
In situ crystallisation in ZrO<sub>2</sub> thin films during high temperature X-ray diffraction.
Microelectron. Reliab., 2001