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2024
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H<sup>3</sup>TRB Testing.
[DOI]
B. D. Rummel
,
C. E. Glaser
,
R. T. Gurule
,
M. Groves
,
A. T. Binder
,
R. Floyd
,
L. Yates
,
K. J. Reilly
,
R. J. Kaplar
Proceedings of the IEEE International Reliability Physics Symposium, 2024