×
2024
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination.
[DOI]
Xiaorong Luo
,
Linyao Hao
,
Yuxi Wei
,
Kaiwei Dai
,
Xiaosong Peng
,
Zhuolin Jiang
,
Yuxin Wu
Microelectron. J., 2024