×
2023
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.
[DOI]
Sheng-Lei Zhao
,
Jincheng Zhang
,
Yachao Zhang
,
Lansheng Feng
,
Shuang Liu
,
Xiufeng Song
,
Yixin Yao
,
Jun Luo
,
Zhihong Liu
,
Shengrui Xu
,
Yue Hao
Sci. China Inf. Sci., February, 2023