A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement.
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Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy.
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Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018