Direct Preference Optimization-Enhanced Multi-Guided Diffusion Model for Traffic Scenario Generation.
CoRR, February, 2025
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
A 512Gb 3b/Cell 7<sup>th</sup> -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
R3F: RDF triple filtering method for efficient SPARQL query processing.
World Wide Web, 2015
7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
RG-index: An RDF graph index for efficient SPARQL query processing.
Expert Syst. Appl., 2014
Lane detection & localization for UGV in urban environment.
Proceedings of the 17th International IEEE Conference on Intelligent Transportation Systems, 2014
Join processing using Bloom filter in MapReduce.
Proceedings of the Research in Applied Computation Symposium, 2012
RP-Filter: A Path-Based Triple Filtering Method for Efficient SPARQL Query Processing.
Proceedings of the Semantic Web - Joint International Semantic Technology Conference, 2011
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
IEEE J. Solid State Circuits, 2008
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
IEEE J. Solid State Circuits, 2007
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007
Enhanced write performance of a 64-mb phase-change random access memory.
,
,
,
,
,
,
,
,
,
,
,
,
IEEE J. Solid State Circuits, 2006
A 0.1µm 1.8V 256Mb 66MHz Synchronous Burst PRAM.
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM).
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
IEEE J. Solid State Circuits, 2005