2016
7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory.
[DOI]
Tomoharu Tanaka
,
Mark Helm
,
Tommaso Vali
,
Ramin Ghodsi
,
Koichi Kawai
,
Jae-Kwan Park
,
Shigekazu Yamada
,
Feng Pan
,
Yuichi Einaga
,
Ali Ghalam
,
Toru Tanzawa
,
Jason Guo
,
Takaaki Ichikawa
,
Erwin Yu
,
Satoru Tamada
,
Tetsuji Manabe
,
Jiro Kishimoto
,
Yoko Oikawa
,
Yasuhiro Takashima
,
Hidehiko Kuge
,
Midori Morooka
,
Ali Mohammadzadeh
,
Jong Kang
,
Jeff Tsai
,
Emanuele Sirizotti
,
Eric Lee
,
Luyen Vu
,
Yuxing Liu
,
Hoon Choi
,
Kwonsu Cheon
,
Daesik Song
,
Daniel Shin
,
Jung Hee Yun
,
Michele Piccardi
,
Kim-Fung Chan
,
Yogesh Luthra
,
Dheeraj Srinivasan
,
Srinivasarao Deshmukh
,
Kalyan Kavalipurapu
,
Dan Nguyen
,
Girolamo Gallo
,
Sumant Ramprasad
,
Michelle Luo
,
Qiang Tang
,
Michele Incarnati
,
Agostino Macerola
,
Luigi Pilolli
,
Luca De Santis
,
Massimo Rossini
,
Violante Moschiano
,
Giovanni Santin
,
Bernardino Tronca
,
Hyunseok Lee
,
Vipul Patel
,
Ted Pekny
,
Aaron Yip
,
Naveen Prabhu
,
Purval Sule
,
Trupti Bemalkhedkar
,
Kiranmayee Upadhyayula
,
Camila Jaramillo
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016